Series connection of insulated gate bipolar transistors (IGBTs)

WITHANAGE, Ruchira and SHAMMAS, Noel (2012) Series connection of insulated gate bipolar transistors (IGBTs). Power Electronics, IEEE Transactions on, 27 (4). pp. 2204-2212. ISSN 0885-8993

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Abstract or description

High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage across series-connected devices can be minimized by using active gate control techniques, snubber circuits, and active clamping circuits. The primary objectives of this paper are to discuss existing voltage-balancing techniques, to present a novel hybrid voltage-balancing technique, and to optimize the number of insulated gate bipolar transistors (IGBTs) in a series string in terms of power losses. The novel voltage-balancing technique can achieve good voltage balancing with a minimum number of components and minimum total losses (i.e., IGBT losses and balancing circuit losses). This technique was validated by both simulation and experimental work. The power loss of a high-voltage switch depends on the voltage-balancing circuit and the number of IGBTs in series and switching frequency. For a given application, the optimum number of IGBTs, in terms of power losses, depends on device characteristics and switching frequency.

Item Type:	Article
Subjects:	H100 General Engineering H600 Electronic and Electrical Engineering H900 Others in Engineering
Faculty:	Previous Faculty of Computing, Engineering and Sciences > Engineering
Depositing User:	Rakesh YEDLA
Date Deposited:	28 Jan 2013 15:13
Last Modified:	24 Feb 2023 13:36
URI:	https://eprints.staffs.ac.uk/id/eprint/407

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