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Optimisation of the number of IGBT devices in a series-parallel string

SHAMMAS, Noel, WITHANAGE, Ruchira and Chamund, Dinesh (2008) Optimisation of the number of IGBT devices in a series-parallel string. Microelectronics Journal, 39 (6). pp. 899-907. ISSN 00262692

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Abstract or description

High-power semiconductor switches can be realised by connecting existing devices in series and parallel. The number of devices in series depends on the operating voltage of an application and the individual device voltage rating. For a given application, the use of higher voltage rated IGBTs leads to a fewer number of devices and vice versa. The total power loss of the series string equals to the sum of individual IGBT power losses and total loss increases with the increase in operating frequency. The level of increase in power loss depends on the device characteristics. For high current operation, the minimum number of devices depends on the current rating of individual device. In this paper, series IGBT string of six 1.2kV, four 1.7kV, two 3.3kV and a single 6.5kV IGBTs are simulated for a 4.5kV/100A application and power losses are analysed for different frequencies and duty cycles. This power loss analysis is extended for commercial IGBTs to compare the simulation results. The number of devices for minimum power loss depends on operating frequencies and power savings are significant both at low and high frequencies. In addition to the power losses, the other important issues in optimising the number of IGBTs are described in this paper. When IGBT modules are connected in parallel the principle of derating is applied to obtained reliable operation. This is explained with some examples.

Item Type: Article
Uncontrolled Keywords: Derating, IGBT, Series and parallel connection
Faculty: Previous Faculty of Computing, Engineering and Sciences > Engineering
Depositing User: Rakesh YEDLA
Date Deposited: 28 Jan 2013 15:14
Last Modified: 24 Feb 2023 13:36

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