Schottky barrier characterization of lead phthalocyanine/aluminium interfaces
SADAT-SHAFAI, Torfeh (2008) Schottky barrier characterization of lead phthalocyanine/aluminium interfaces. Thin Solid Films, 517 (3). pp. 1200-1203. ISSN 0040-6090Full text not available from this repository.
Abstract or description
Thin sandwich film structure consisting of several cells is fabricated by successive thermal sublimation of aluminium, lead phthalocyanine and aluminium under high vacuum conditions (10− 4 Pa). The dark current density–voltage (J–V) characteristics indicate rectifying junctions exists at PbPc/Al interface. Devices exposed to oxygen were found to exhibit an enhanced Schottky type behaviour. Measurements on the dependence of capacitance and conductance on frequency and temperature are also investigated. These are quantitatively interpreted using an equivalent circuit model. Structural properties of lead phthalocyanine film were studied using X-ray diffraction techniques.
|Subjects:||H100 General Engineering
H600 Electronic and Electrical Engineering
H900 Others in Engineering
|Faculty:||Previous Faculty of Computing, Engineering and Sciences > Engineering|
|Depositing User:||Peter OGRODNIK|
|Date Deposited:||14 Nov 2012 15:40|
|Last Modified:||04 Sep 2013 12:36|
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