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Schottky barrier characterization of lead phthalocyanine/aluminium interfaces

SADAT-SHAFAI, Torfeh (2008) Schottky barrier characterization of lead phthalocyanine/aluminium interfaces. Thin Solid Films, 517 (3). pp. 1200-1203. ISSN 0040-6090

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Abstract or description

Thin sandwich film structure consisting of several cells is fabricated by successive thermal sublimation of aluminium, lead phthalocyanine and aluminium under high vacuum conditions (10− 4 Pa). The dark current density–voltage (J–V) characteristics indicate rectifying junctions exists at PbPc/Al interface. Devices exposed to oxygen were found to exhibit an enhanced Schottky type behaviour. Measurements on the dependence of capacitance and conductance on frequency and temperature are also investigated. These are quantitatively interpreted using an equivalent circuit model. Structural properties of lead phthalocyanine film were studied using X-ray diffraction techniques.

Item Type: Article
Subjects: H100 General Engineering
H600 Electronic and Electrical Engineering
H900 Others in Engineering
Faculty: Previous Faculty of Computing, Engineering and Sciences > Engineering
Depositing User: Torfeh SADAT-SHAFAI
Date Deposited: 05 Nov 2013 18:25
Last Modified: 05 Nov 2013 18:25
URI: http://eprints.staffs.ac.uk/id/eprint/1771

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