Modelling of power semiconductor devices for pulse power applications
Chamund, Dinesh and SHAMMAS, Noel and Taylor, Paul (2009) Modelling of power semiconductor devices for pulse power applications. In: Universities Power Engineering Conference (UPEC), 2009 Proceedings of the 44th International.Full text not available from this repository.
Abstract or description
Operating devices within the data-sheets limits assures safe and reliable operation of devices, however some applications such as pulsed power fall outside the natural applications limits for which the devices are originally designed. Therefore modelling these devices outside their normal application area becomes important. In this paper we introduce a new methodology where by electro-thermal device models are created from the datasheet information which can be used to calculate the maximum junction temperature for reliable operation.
|Item Type:||Conference or Workshop Item (Paper)|
|Uncontrolled Keywords:||Application software;Circuit simulation;Power semiconductor devices;Semiconductor devices;Surges;Switching loss;Temperature dependence;Thermal resistance;Thyristors;Voltage;power semiconductor devices;pulsed power supplies;datasheet information;electrothermal device models;maximum junction temperature;power semiconductor devices modelling;pulse power applications;Power Semiconductor Devices;Pulse power;Simulation;|
|Subjects:||H100 General Engineering
H600 Electronic and Electrical Engineering
H900 Others in Engineering
|Faculty:||Faculty of Computing, Engineering and Sciences > Engineering|
|Depositing User:||Rakesh YEDLA|
|Date Deposited:||28 Jan 2013 15:16|
|Last Modified:||15 May 2013 14:16|
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