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Junction properties of nickel phthalocyanine thin film devices utilising indium injecting electrodes

SADAT-SHAFAI, Torfeh and Anthopoulos, T (2001) Junction properties of nickel phthalocyanine thin film devices utilising indium injecting electrodes. Thin Solid Films, 398-39. pp. 361-367.

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Abstract or description

The d.c. electrical properties of gold/nickel phthalocyanine/indium (Au/NiPc/In) thin film structures have been investigated. Three-layered devices were fabricated utilising a sequential vacuum sublimation technique. At low voltages, current density in the forward direction was found to obey the diode equation, while for higher voltage levels, conduction was dominated by a space-charge-limited conduction (SCLC) mechanism. In the reverse bias direction a transition from electrode-limited to a bulk-limited conduction process was identified. After prolonged exposure of the sample to dry air a weak polarity dependence of conduction was observed. Analysis of the experimental data under reverse bias suggests a transition from electrode-limited to a bulk-limited conduction process for lower and higher applied voltages, respectively. After annealing of the samples at 393 K in vacuum for 20 min, a strong rectifying behaviour was evident. Results were interpreted in terms of an O2 adsorption process at the NiPc/In interface. Hole trapping parameters together with various junction properties have been also reported and analysed. © 2001 Elsevier Science B.V. All rights reserved.

Item Type: Article
Additional Information: cited By 63
Faculty: School of Creative Arts and Engineering > Engineering
Depositing User: Library STORE team
Date Deposited: 09 May 2018 15:11
Last Modified: 09 May 2018 15:11
URI: http://eprints.staffs.ac.uk/id/eprint/4387

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