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Influence of O2 on rectification properties of Nickel Phthalocyanine thin film devices

Anthopoulos, T.D. and SADAT-SHAFAI, Torfeh (2000) Influence of O2 on rectification properties of Nickel Phthalocyanine thin film devices. In: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO 2000, 13-14th November 2000, Glasgow; United Kingdom.

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Abstract or description

Thin sandwich film structure devices of Gold/Nickel Phthalocyanine/Lead (Au/NiPc/Pb) were fabricated employing a novel in-situ method. Electrical measurements were performed prior to, and after exposure of the samples to dry air. Under forward bias and for low applied voltages an ohmic conduction was evident, followed by SCLC in the higher voltage range. In the reverse bias, devices were found to exhibit weak rectifying properties originated mainly from the bulk of the NiPc layer. After exposure of the sample to dry air for five days a strong rectifying effect at the NiPc/Pb interface was evident. The phenomenon is believed to be associated with a change of NiPe work function as result of O2 adsorption on the NiPe layer. To verify this a second sample of the type Au/NiPcO2/Pb was fabricated. Electrical characterization of the sample showed stronger rectifying properties providing further experimental evidence on the influence of 02 adsorption on the organic layer. Potential barrier height and diode ideality factor for both NiPc/Pb, and NiPcO2/Pb interfaces after exposure to dry air, were also calculated.

Item Type: Conference or Workshop Item (Paper)
Additional Information: cited By 2
Faculty: School of Creative Arts and Engineering > Engineering
Depositing User: Library STORE team
Date Deposited: 04 May 2018 13:32
Last Modified: 26 Jun 2018 11:39
URI: http://eprints.staffs.ac.uk/id/eprint/4389

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