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Dimensioning of Power semiconductor devices in their unnatural environment

CHAMUND, D and SHAMMAS, Noel (2008) Dimensioning of Power semiconductor devices in their unnatural environment. In: EHAC'08 Proceedings of the 7th WSEAS International Conference on Electronics, Hardware, Wireless and Optical Communications, 20-22 Febraury 2008, Cambridge UK.


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Abstract or description

Power diodes, high power thyristors, gate turn-off thyristors (GTOs)
and IGBT modules are the main power switches widely used in the industries
today. Therefore it is important that ratings and characteristics are well
understood before these devices are designed in the systems. Operating
devices within the data-sheets limits assures safe and reliable operation of
devices, however some applications such as pulsed power fall outside the
natural applications limits for which the devices are originally designed.
Therefore dimensioning these devices outside their normal application area
becomes somewhat difficult. In this paper we introduce a methodology where
by electro-thermal device models are created from the datasheet information
which can be used in conjunction with spreadsheet to calculate the maximum
junction temperature for reliable operation of power devices under abnormal

Item Type: Conference or Workshop Item (Paper)
Subjects: H100 General Engineering
H600 Electronic and Electrical Engineering
H900 Others in Engineering
Faculty: Previous Faculty of Computing, Engineering and Sciences > Engineering
Depositing User: Khaja MOHAMMED
Date Deposited: 28 Jan 2013 15:14
Last Modified: 28 Jan 2013 15:14

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