Eio, S. and SHAMMAS, Noel (2008) IGBT tail current reduction by current injection technique. In: Universities Power Engineering Conference, 2008. UPEC 2008. 43rd International, 1-4 Sept. 2008, Padova.
Full text not available from this repository.Abstract or description
In this paper, experiments where current was injected into an IGBT (insulated gated bipolar transistor) during its turn-off transient were carried out. Results showed a significant reduction in the IGBTpsilas collector tail current which could increase the operating frequency for an application. These experiment includes a switching transient test circuit to simulate the collector tail currents, and the implementation of a current injection circuit (CIC) and a non-invasive current injection circuit (NICIC) into the experiments to reduce the collector tail current.
Item Type: | Conference or Workshop Item (Paper) |
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Uncontrolled Keywords: | Bipolar transistors;Charge carrier lifetime;Circuit testing;Gold;Impurities;Insulated gate bipolar transistors;Insulation;Platinum;Tail;Voltage;insulated gate bipolar transistors;IGBT tail current reduction;collector tail current reduction;insulated gated bipolar transistor;non-invasive current injection circuit;switching transient test circuit;turn-off transient; |
Faculty: | Previous Faculty of Computing, Engineering and Sciences > Engineering |
Event Title: | Universities Power Engineering Conference, 2008. UPEC 2008. 43rd International |
Event Location: | Padova |
Event Dates: | 1-4 Sept. 2008 |
Depositing User: | Rakesh YEDLA |
Date Deposited: | 28 Jan 2013 15:15 |
Last Modified: | 24 Feb 2023 03:46 |
URI: | https://eprints.staffs.ac.uk/id/eprint/415 |